Recent Patents on Electrical Engineering

ISSN: 1874-4761 - Volume 1, 2008

Editor-in-Chief:

Khurshid Zaman
Bentham Science Publishers Ltd.

Editorial Advisory Board:

A. Abbosh (Univ. Queensland, Brisbane, Australia)
A. Abdollahi ((Univ. California, Riverside, CA, USA)
N. Abu-Khader (Hashemite Univ., Zarqa, Jordan)
T. Adali (Univ.Maryland Baltimore County, Baltimore, MD, USA)
S.S. Agaian (University of Texas San Antonio, San Antonio, TX, USA)
A.G. Aghdam (Concordia Univ., Montreal, Canada)
A. Ahmadinia (Univ. Edinburgh, Edinburgh, Scotland)
F. Ahmad (Tarleton State University, Stephenville, TX, USA)
W.H. Ahmed (Atomic Energy Canada Ltd., Chalk River, Canada)
B. Ai (Tsinghua University, Beijing, China)
A. Akdagli (Mersin University, Mersin, Turkey)
A. Akhbardeh (Tampere Univ.Tech., Tampere, Finland)
G. Ala (Università degli Studi di Palermo, Palermo, Italy)
A.M.A. Ali (Analog Devices, Inc., Greensboro, NC, USA)
E. Alarcón (Technical University of Catalunya, Barcelona, SPAIN)
E. Atanassova (Institute of Solid State Physics, Sofia, Bulgaria)
A. AL-Omari (Colorado State University, Fort Collins, CO, USA)
A.H. Al-Khursan (Thi-Qar University, Nassiriya, Iraq)
E. Altman (INRIA, Sophia Antipolis, France)
A. Anand (Philips Res. North America, Briarcliff Manor, NY, USA)
A. Astolfi (Imperial College London, London, UK)
D.K. Aswal (Bhabha Atomic Res. Ctr., Mumbai, India)
R. Al-Asmar (USEK, Jounieh, Lebanon)
E. Atanassova (Institute of Solid State Physics, Sofia, Bulgaria)
A.A.O. Atitfi (Cairo University, Cairo, Egypt)
A. Balasinski (Cypress Semiconductor, San Jose, CA, USA)
A. Banos (University of Murcia, Murcia, Spain)
R. Bashir (Purdue University, West Lafayette, IN, USA)
C. Basaran (University at Buffalo, Buffalo, NY, USA)
S. Battiato (University of Catania, Catania, Italy)
A. Benfdila (University M. Mammeri, Tizi-Ouzou , Algeria)
S. Bhanja (Univ.South Florida, Tampa, FL, USA)
A. Bhushan (Louisiana State University, Baton Rouge, LA)
Á.A.S. Blas Oltra (Univ.Miguel Hernández de Elche, Alicante, Spain)
A. Bo (Beijing Jiaotong University, Beijing, China)
H. Bogdan (Univ.Alaska Anchorage, Anchorage, AK, USA)
S. Callegari (University of Bologna, Bologna, Italy)
C.A. Canesin (UNESP- FEIS - Sa~o Paulo State University, Ilha Solteira, Brazil)
T. Chahed (Institute National des Télécommunications, Cedex, France)
T.K. Chen (National Univ. Singapore, Singapore, Singapore)
Y.-T. Cheng (National Chiao Tung University, Hsinchu, Taiwan)
A.O. Conde (Universidad Simón Bolívar , Caracas, Venezuela)
A.G. Constantinides (Imperial College, London, UK)
G.E. Corazza (Univ.of Bologna, Bologna, Italy)
M. Debbah (SUPELEC, Cedex, France)
A.R. Dhaini (Concordia University, Montreal, Canada)
A. Dokania (Delft Univ.Tech., Delft, Netherlands)
C. Duvvury (Texas Instruments, Dallas , TX, USA)
S.S. Chung (National Chiao Tung University, Hsinchu, Taiwan)
G. Eden (University of Ilinois, Urbana, IL, USA)
A. Eldek (Jackson State Univ., Jackson, MS, USA)
A. El-Maleh (KFUPM, Dhahran, Saudi Arabia)
A. Eroglu (MKS Instruments, Rochester, NY, USA)
J. R. Espinoza (Universidad de Concepcio´n, Concepcio´n, Chile)
A. Fallahi (Univ. Manitoba, Winnipeg, Canada)
Z. Fan (Xerox Res.Tech. Corp., Webster, NY, USA)
S.Y. Foo (Florida Agric./Mechanical University, Tallahassee, FL, USA)
P. Franzon (NC State University, Raleigh, NC, USA)
A. Freundlich (Univ. Houston, Houston, TX, USA)
T. Fukuda (Nagoya University, Nagoya, Japan)
A. Giannoula (University of Toronto,Toronto, Canada)
N.M. Gorshkova (Inst. Radio Eng. Elect., Moscow, Russia)
A. Görür (Nigde Üniversitesi, Nigde, Turkey)
R. Gupta (University of California, San Diego, CA, USA)
A. Gusso (UESC, Bahia, Brazil)
A.B. Hadiashar (Swinburne Univ.Technology, Victoria, Australia)
P. Handel (Royal Inst.Tech., Stockholm, Sweden)
A. Harb (Univ. Central Florida, Orlando, FL, USA)
B. Hoanca (Univ. Alaska Anchorage, Anchorage, AK, USA)
A. Hossen (Sultan Qaboos University, Muscat, Oman)
C.Y. Huang (National Chiao Tung University, Hsinchu, Taiwan)
A. Ignative (University of Houston, Houston, TX, USA)
B. Ismail (Lakehead University, Thunder Bay, Canada)
M. Ismail (Ohio State University, Columbus, OH, USA)
C. Jagadish (Australian National University, Canberra, Australia)
A. Jain (Samrat Ashok Technological Institute,Vidisha, India)
O. Al-Jarrah (Jordan University of Science and Technology, Irbid, Jordan)
Z.-P. Jiang (Polytechnic University, Brooklyn, NY, USA)
Y. Jin (Honda Research Institute Europe, Offenbach, Germany)
A. Jones (Univ. Pittsburgh, Pittsburgh, PA, USA)
I.A. Kakadiaris(University of Houston, Houston, TX, USA)
H. Kalva (Florida Atlantic University, Boca Raton, FL, USA)
T. Kanade (Carnegie-Mellon Univ., Pittsburgh, PA, USA)
A.D. Karlis (Democritus Univ.Thrace, Xanthi, Greece)
A.N. Khalil (City College of City Univ., New York, NY, USA)
A. Khan (Brunel University, West London, UK)
M.A. Khan (Memorial Univ. Newfoundland, St. John's, Canada)
S.P. Khatri (Texas A&M University, Texas, TX, USA)
S. Khizroev (University of California, Riverside, CA, USA)
J. Kocijan (Jozef Stefan Institute, Ljubljana, Slovenia)
A. Kong (Univ. Waterloo Waterloo, Canada)
E.B. Kosmatopoulos (Technical University of Crete, Crete, Greece)
A.Y. Kovalgin (Univ. Twente, Enschede, Netherlands)
M.J. Kumar (Indian Inst. Tech., New Delhi, India)
A. Kumar (AK Electromagnetique Inc., Les Coteaux, Canada)
G.A. Kumar (Rutgers-State Univ. New Jersey, Piscataway, NJ, USA)
T.R. Kurfess (Clemson University, Clemson, SC, USA)
Y.S. Lai ( Advanced Semiconductor Engineering, Inc ,Kaohsiung, Taiwan)
D.A. Lampasi (University of Rome Sapienza, Roma, Italy)
A. Lau (Stanford University, Stanford, CA, USA)
N.-C. Lee (Indium Corporation of America, Clinton, NY, USA)
M.D. Levine (McGill University, Montreal, Canada)
Y.C. Liang (National University of Singapore, Singapore)
Y.B. Lin (National Chiao Tung University, Hsinchu, Taiwan)
A.N. Lozhkin (Fujitsu Laboratories Ltd, Yokosuka , Japan)
A. Lo´pez-Marti´n (Public University of Navarra, Navarra, Spain)
J. Lu (Institute of Systems Science, Beijing, China)
L.H. Lu (National Taiwan Univ.,Taipei, Taiwan)
P. C.-K. Luk (Cranfield University - DCMT, Shrivenham, UK)
A.K. Mahapatro (Purdue University, West Lafayette, IN, USA)
M.A. Mahdi (Universiti Putra Malaysia, Selangor, Malaysia)
T.J. Maloney (Taiwan University, Intel Santa Clara, Taiwan)
J. Silva-Martinez ( Texas A&M University, Texas , TX, USA)
M. Mehregany (Case Western Reserve Univ., Cleveland, OH, USA)
A.Z. Melikov (Institute of Cybernetics, Baku, Azerbaijan)
S.O. Memik (Northwestern University, Evanston, IL, USA)
A. Merkocìi (Catalan Institute of Nanotechnology (ICN), Barcelona, Spain)
A. Mitra (Indian Inst.Tech., Guwahati, India)
P. Mohapatra (University of California, Davis, CA, USA)
A. Morini (Univ. Politecnica delle Marche, Ancona, Italy)
J.E. Morris (Portland State University, Portland, OR, USA)
S.C. Mukhopadhyay (Massey University, Palmerston North, New Zealand)
K. Nagaraj (Texas Instruments Incorporated, Dallas, TX, USA)
V.G. Oklobdzija (University of California at Davis, Davis, CA, USA )
S. Oraintara (Univ.of Texas, Arlington, TX, USA)
A.A. Orouji (Semnan University, Semnan, Iran)
A. El Oualkadi (Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium)
T. Pavlidis (Stony Brook Univ., Stony Brook, NY, USA)
Y. Paek (School of Electrical Engineering, Seoul, South Korea)
M. Poncino (Politecnico di Torino, Torino, Italy)
H.R. Pota (University of New South Wales, Sydney, Australia)
A. Poursaberi (University of Tehran,Tehran, Iran)
A. Pourzaki (Khorasan Sci.Tech.Park, Mashhad, Iran)
R. Puri (IBM T J Watson Research Center, Yorktown Heights, NY, USA)
A. Ramezani (Sharif University of Technology , Tehran, Iran)
V.R. Rao (Indian Institute of Technology, Mumbai, India)
A. Rastegar (SEMATECH, Albany, NY, USA)
A.K. Ray (Queen Mary Univ.of London, London, UK)
D.W. Repperger ( Air Force Research Laboratory, Ohio, OH, USA)
E.A. Robinson (Columbia University, New York, MA, USA)
B. Roberto ( University of Trento, Trento, Italy)
E. Saber (Rochester Inst. Tech., Rochester, NY, USA)
K. Saeed (Bialystok Technical University, Bialystok, Poland)
A. Salhi (Natl. Nanotech. Laboratory, Lecce, Italy)
A.A. Salman (AMD, Sunnyvale, CA, USA)
B.G. Sammakia (State University of New York at Binghamton, Binghamton, NY, USA)
S.C.M. Samson (DSO National Labs, Singapore, Singapore)
A.J. Sangster (Heriot-Watt University, Edinburgh, Scotland)
A.V. Savkin (The Univ.New South Wales, Sydney, Australia)
R.K. Savkina (National Academy of Sciences of Ukraine, Kiev, Ukraine)
G. Sberveglieri (Universita di Brescia, Brescia, Italy)
R. Schettini (Università degli Studi di Milano-Bicocca, Milan, Italy)
D. Schonfeld (University of Illinois, Chicago, IL, USA)
J.L. Schwartz (Florida State University, Tallahassee, FL, USA)
A.K. Seghouane (Australian Natl. Univ., Canberra, Australia)
D.K. Shaeffer (Aspendos Communications, Inc., Santa Clara, CA, USA)
F. Shi (University of California, Irvine, CA, USA)
M.A. Shibib (International Rectifier, El Segundo, CA, USA)
G.C. Sirakoulis (Democritus University of Thrace, Xanthi, Greece)
S. K. Sitaraman (Georgia Institute of Technology, Atlanta, GA, USA)
A. Solanas (Rovira i Virgili Univ., Tarragona, Spain)
P.P. Sotiriadis (The Johns Hopkins University, Baltimore, MD, USA)
A. Souifi (Lyon's Inst. Nanoteh., Lyon, France)
M.R. Stan (University of Virginia, Charlottesville, VA , USA)

C.Y. Su (Concordia University, Montreal, Canada)
Y. Sun (University of Hertfordshire, Hatfield, UK)
A.Swarnakar (University of Alberta, Edmonton, Canada)
A. Tayebi (Lakehead University, Thunder Bay, Canada)
D.V. Thiel (Centre for Wireless Monitoring and Applications, Nathan, Australia)
G. Tina (University of Catania, Catania, Italy)
A.H. Titus (State Univ. New York, Buffalo, NY, USA)
A. M.Trzynadlowski (University of Nevada, Reno, NV, USA)
T. Tsiftsis (Aristotle Univ. Thessaloniki, Thessaloniki, Greece)
S. Tumanski (Warsaw University of Technology, Warsaw, Poland)
A. Ukil (Tshwane Univ. Tech., Pretoria, South Africa)
A. Ulyashin (Institute for Energy Technology, Kjeller, Norway)
Y. Vardi (Rutgers University, Piscataway, NJ, USA)
A.C. Vidal (CEIT, Donostia, Spain)
S.H. Voldman (Semiconductor Res.Dev.Ctr., Essex Junction, VT, USA)
A. Walker (Vadum Inc., Raleigh, NC, USA)
A. Walker (North Carolina State University, Raleigh, NC, USA)
L. Wang (Nanyang Tech. University, Singapore, Singapore)
H.Y. Wang (Natl. Kaohsiung Univ. Applied Sciences, Kaohsiung, Taiwan)
Z.L. Wang (Georgia Institute of Technology, Atlanta, GA, USA)
M. Willander (Go¨teborg University, Teborg, Sweden)
A. Woyte (3E nv, Brussels, Belgium)
K. Wu (Ecole Polytechnique, Montreal, Canada)
M.Q. Xiao (Southern Illinois Univ., Carbondale, IL, USA)
M. Yamashita (Kyushu University, Higashiku, Japan)
Y.D. Yao (Stevens Institute of Technology, Hoboken, NJ, USA)
S. Yi (Portland State University, Portland, USA)
A. Yin (Brown University, Providence, RI, USA)
S.F. Yu (Nanyang Tech. University, Singapore, Singapore)
M. Yung (Columbia University, New York, NY, USA)
A.A. Zavala (Tecnológico de Monterrey, Monterrey, Mexico)
A.F. Zobba (University of Exeter, Cornwall, UK)
A. Zolotas (Loughborough University, Loughborough, UK)
M. Zwolinski (University of Southampton, Southampton, UK)